Impact of Interface Traps Generation on Flicker Noise Degradation in SI pMOSFETs
Author:
Affiliation:
1. Zhejiang University,School of Micro- and Nano-Electronics,Hangzhou,China,310000
2. Institute of Zhejiang Intelligence Lab,Chengdu,China,610213
Funder
Natural Science Foundation of Sichuan Province
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10219185/10219154/10219409.pdf?arnumber=10219409
Reference7 articles.
1. Overview of the impact of downscaling technology on 1∕f noise in p-MOSFETs to 90 nm
2. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
3. Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs
4. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
5. 1/f noise and germanium surface properties;mcwhorter;Semiconductor Surface Physics,1957
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