Simulation Investigation On The Characteristics Of Gan-Based Multi-Quantum Wells Micro-Leds-Reference-Cited by-同舟云学术

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Simulation Investigation On The Characteristics Of Gan-Based Multi-Quantum Wells Micro-Leds

Published:2023-06-26 Issue: Volume: Page:
ISSN:
Container-title:2023 China Semiconductor Technology International Conference (CSTIC)
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Author:

Ye Pengfei¹,Gui Youshan²,Li Yue¹,Chen Ding¹,Yu Jinghao²,Tong Yi²,Da Haixia¹

Affiliation:

1. Nanjing University of Posts and Telecommunications,College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology),Nanjing,China,210023

2. Nanjing University of Posts and Telecommunications,College of Integrated Circuit Science and Engineering,Nanjing,China,210023

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10219185/10219154/10219272.pdf?arnumber=10219272

Reference13 articles.

1. Applied Sciences

2. Applied Sciences

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