Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT-Reference-Cited by-同舟云学术

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Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT

Published:1993-10 Issue:10 Volume:3 Page:363-365
ISSN:1051-8207
Container-title:IEEE Microwave and Guided Wave Letters
language:
Short-container-title:IEEE Microw. Guid. Wave Lett.

Author:

Lai R.,Wojtowicz M.,Chen C.H.,Biedenbender M.,Yen H.C.,Streit D.C.,Tan K.L.,Liu P.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Physics and Astronomy,General Engineering

Link

http://xplorestaging.ieee.org/ielx4/75/6227/00242262.pdf?arnumber=242262

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlN/GaN/AlN High Electron Mobility Transistors;Springer Theses;2022

2. Next generation electronics on the ultrawide-bandgap aluminum nitride platform;Semiconductor Science and Technology;2021-03-22

3. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19

4. High Electron Mobility Transistors (HEMTs);Electrical Engineering Handbook;2007-12-22

5. Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses;Microelectronics Reliability;2006-12

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