Normally-Off Thin-Film Silicon Heterojunction Field-Effect Transistors and Application to Complementary Circuits
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/6803890/06767029.pdf?arnumber=6767029
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A single-oscillator long-wave-length limit Sellmeier equation based fitting approach applied to the case of thin-film silicon and some of its more common alloys;Journal of Materials Science: Materials in Electronics;2021-01
2. Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates;IEEE Access;2019
3. Thin-Film Heterojunction FETs on Poly-Si Substrates for High-Stability Driving and Low-Power Amplification;IEEE Electron Device Letters;2018
4. Thin-Film Silicon Heterojunction FETs for Large Area and Flexible Electronics: Design Parameters and Reliability;IEEE Transactions on Electron Devices;2015-11
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