Novel Cu-nanowire-based technology enabling fine pitch interconnects for 2.5D/3D Integration-Reference-Cited by-同舟云学术

Novel Cu-nanowire-based technology enabling fine pitch interconnects for 2.5D/3D Integration

Published:2022-09-13 Issue: Volume: Page:
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Container-title:2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC)
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Author:

Shehzad Adil¹,Yin Ran²,Panchenko Iuliana³,Muller Maik²,Bickel Steffen¹,Birlem Olav⁴,Quednau Sebastian⁴,Wolf Jurgen M.¹

Affiliation:

1. Fraunhofer Institute for Reliability and Microintegration IZM-ASSID,Dresden,Germany

2. Institute of Electronic Packaging Technology, Technische Universitaet Dresden,Dresden,Germany

3. Fraunhofer Institute for Reliability and Microintegration IZM-ASSID and Institute of Electronic Packaging Technology, Technische Universitaet Dresden,Dresden,Germany

4. Nanowired GmbH,Gernsheim,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9939139/9939378/09939420.pdf?arnumber=9939420

Reference6 articles.

1. In situsynthesis of metallic nanowire arrays for ionization gauge electron sources

2. Microstructure Development of Cu/SiO₂ Hybrid Bond Interconnects After Reliability Tests

3. Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates

4. Low-Resistance Room-Temperature Interconnection Technique for Bonding Fine Pitch Bumps

5. Proceedings of the 5th Electronics System-integration Technology Conference (ESTC);palesko;Cost and yield analysis of multi-die packaging using 2 5 D technology compared to fan-out wafer level packaging,0

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