A Systematic Approach to Correlation Analysis of In-Line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET Devices-Reference-Cited by-同舟云学术

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A Systematic Approach to Correlation Analysis of In-Line Process Parameters for Process Variation Effect on Electrical Characteristic of 16-nm HKMG Bulk FinFET Devices

Published:2016-08 Issue:3 Volume:29 Page:209-216
ISSN:0894-6507
Container-title:IEEE Transactions on Semiconductor Manufacturing
language:
Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Su Ping-Hsun,Li Yiming

Funder

Ministry of Science and Technology, Taiwan

TSMC, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/66/7524665/07500068.pdf?arnumber=7500068

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Trends in Novel Semiconductor Devices;Silicon;2022-01-28

2. Bayesian Optimization of MOSFET Devices Using Effective Stopping Condition;IEEE Access;2021

3. Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics;IEEE Electron Device Letters;2020-10

4. Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application;IEEE Access;2020

5. Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices;IEEE Electron Device Letters;2018-03

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