Use of Transistor-Simulated Inductance as an Interstate Element in Broadband Amplifiers-Reference-Cited by-同舟云学术

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Use of Transistor-Simulated Inductance as an Interstate Element in Broadband Amplifiers

Published:1968-03 Issue:1 Volume:3 Page:12-21
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Archer J.A.,Gibbons J.F.,Purnaiya G.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22503/01049830.pdf?arnumber=1049830

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Miniaturized Active Metamaterial Resonant Antenna With Improved Radiation Performance Based on Negative-Resistance-Enhanced CRLH Transmission Lines;IEEE Antennas and Wireless Propagation Letters;2018-07

2. A simulation of high-frequency mutually coupled circuit using bipolar transistors;Electronics and Communications in Japan (Part II: Electronics);1991

3. Frequency-Related Impedance Transformations;Handbook of Analog Circuit Design;1990

4. Some Properties of the Microwave Active Filters;IETE Journal of Research;1972-11

5. Driving point inductance of a transistor with R.C. feedback†;International Journal of Electronics;1970-04

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