Transistor-like device using optical coupling between diffused p-n junctions in GaAs-Reference-Cited by-同舟云学术

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Transistor-like device using optical coupling between diffused p-n junctions in GaAs

Published:1963 Issue:3 Volume:51 Page:470-471
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Rutz R.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31046/01443784.pdf?arnumber=1443784

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination noise in semiconductor junction devices;IEE Proceedings - Circuits, Devices and Systems;2004

2. Virtual analogue simulation of semiconductor lasers and photon transport transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2001

3. Optical devices from AlGaAs-GaAs HBTs heavily doped with amphoteric Si;IEEE Transactions on Electron Devices;1995-04

4. Fabrication and characterization of an In/sub 0.53/Ga/sub 0.47/As/InP photon transport transistor;IEEE Photonics Technology Letters;1993-04

5. Photosensitivity of the capacitance of aSiCx:H/P+PcSi heterojunctions;Solid-State Electronics;1989-05

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