Limitation of properties of field-effect transistors-Reference-Cited by-同舟云学术

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Limitation of properties of field-effect transistors

Published:1966 Issue:1 Volume:54 Page:82-83
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Evans L.,Pullen K.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31080/01446532.pdf?arnumber=1446532

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Subthreshold transconductance in the long-channel MOSFET;Solid-State Electronics;1987-10

2. A simple model of ion-implanted JFETs valid in both the quadratic and the subthreshold regions;IEEE Journal of Solid-State Circuits;1982-08

3. The “barrier mode” behaviour of a junction FET at low drain currents;Solid-State Electronics;1975-11

4. The field-effect modified transistor: a high-responsivity photosensor;IEEE Journal of Solid-State Circuits;1972-10

5. Comments on the bibliography on field-effect transistors;IEEE Transactions on Electron Devices;1970-11

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