Improved performance of GaAs1-xPxlaser diodes-Reference-Cited by-同舟云学术

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Improved performance of GaAs1-xPxlaser diodes

Published:1965 Issue:2 Volume:53 Page:180-181
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Tietjen J.J.,Ochs S.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31069/01445537.pdf?arnumber=1445537

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Thin Films by Chemical Vapour Deposition;1990

2. Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions;Journal of The Electrochemical Society;1974

3. Vapor-Phase Growth of Several III–V Compound Semiconductors;Journal of Vacuum Science and Technology;1971-09

4. BIBLIOGRAPHY;Intermetallic Semiconducting Films;1970

5. Junction Electroluminescence;Applied Solid State Science;1969

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