Conditions for a temperature compensated silicon field effect transistor
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/5/31050/01444354.pdf?arnumber=1444354
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Buried piezoresistive sensors by means of MeV ion implantation;Sensors and Actuators A: Physical;1994-05
2. The temperature dependence of the low-frequency characteristics of junction field-effect transistors;Radio and Electronic Engineer;1977
3. A highly stable current or voltage source;Journal of Physics E: Scientific Instruments;1972-10
4. Large-value monolithic resistors for micropower integrated circuits;IEEE Journal of Solid-State Circuits;1972-04
5. Simple generator for currents in the low microampere region utilizing the f.e.t. source-follower;IEEE Journal of Solid-State Circuits;1970-12
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