New microwave techniques in surface recombination and lifetime studies-Reference-Cited by-同舟云学术

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New microwave techniques in surface recombination and lifetime studies

Published:1963-04 Issue:4 Volume:51 Page:581-592
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Jacobs H.,Brand F.A.,Meindl J.D.,Weitz S.,Benjamin R.,Holmes D.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31047/01444135.pdf?arnumber=1444135

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous photoconductivity decay observed in microwave measurements of carrier lifetime in silicon ingots;Russian Microelectronics;2006-12

2. Method for the Microwave Measurement of Carrier Lifetime in Lightly Doped Silicon Ingots;Russian Microelectronics;2005-09

3. Surface state capture cross sections at Si/electrolyte interfaces determined by combined microwave reflection/photocurrent measurements;Phys. Chem. Chem. Phys.;2003

4. Study of Microwave Transient Photo Conductivity on Single and Polysilicon Using Cavity Perturbation Technique;Japanese Journal of Applied Physics;1996-05-15

5. Sensitivity and transient response of microwave reflection measurements;Journal of Applied Physics;1995-04

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