SB-IGFET, II: An ion implanted IGFET using Schottky barriers-Reference-Cited by-同舟云学术

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SB-IGFET, II: An ion implanted IGFET using Schottky barriers

Published:1969 Issue:5 Volume:57 Page:812-813
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Lepselter M.P.,MacRae A.U.,MacDonald R.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31120/01449019.pdf?arnumber=1449019

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Application of Ion Implantation to Device Fabrication;75th Anniversary of the Transistor;2023-07-03

2. High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain;Japanese Journal of Applied Physics;2008-08-08

3. Design of NOR flash memory cells with high speed programming by utilizing an asymmetric Silicide(TiSi2) Drain;2007 7th International Conference on ASIC;2007-10

4. Analysis of the potential distribution in the channel region of a platinum silicided source/drain metal oxide semiconductor field effect transistor;Applied Physics Letters;1999-05-31

5. Latch-up in CMOS circuits: A review;European Transactions on Telecommunications;1990-05

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