Analytical high-current model for the transit time of SiGe HBTs-Reference-Cited by-同舟云学术

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Analytical high-current model for the transit time of SiGe HBTs

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ISSN:
Container-title:Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)
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Author:

Wilms S.,Rein H.-M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/5956/15940/00741924.pdf?arnumber=741924

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact Modeling of SiGe HBTs;Measurement and Modeling of Silicon Heterostructure Devices;2007-12-13

2. Compact Modeling of SiGe HBTs;Silicon Heterostructure Handbook;2005-11

3. High-Frequency Circuit Design Oriented Compact Bipolar Transistor Modeling with HICUM;IEICE Transactions on Electronics;2005-06-01

4. Germanium profile design options for SiGe LEC HBTs;Solid-State Electronics;2004-07

5. Staying current with HICUM;IEEE Circuits and Devices Magazine;2002-05

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