Hydrogenated amorphous silicon carbide double graded-gap p-i-n thin-film light-emitting diodes-Reference-Cited by-同舟云学术

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Hydrogenated amorphous silicon carbide double graded-gap p-i-n thin-film light-emitting diodes

Published:1993-09 Issue:9 Volume:14 Page:453-455
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shin N.-F.,Chen J.-Y.,Jen T.-S.,Hong J.-W.,Chang C.-Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/6284/00244709.pdf?arnumber=244709

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the substrate conductivity type on the electroluminescence properties of PP+IN and PIN+N diodes based on amorphous silicon carbide (a-Si1-xCx:H) / crystalline silicon (c-Si) heterostructures;Journal of Alloys and Compounds;2024-05

2. Development of Heterojunction c-Si/a-Si1−xCx:H PIN Light-Emitting Diodes;Micromachines;2022-11-10

3. Anomalous Poole–Frenkel Mode of Current-Conduction Mechanism in the P-I-N Thin-Film Light-Emitting Diodes;IEEE Transactions on Electron Devices;2004-06

4. Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD;Thin Solid Films;2003-04

5. Hydrogenation Time Dependence of a-SiC:H-Based P-I-N Thin Film Visible Light-Emitting Diode Characteristics;Japanese Journal of Applied Physics;1996-09-01

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