Type-II GaAs0.5Sb0.5/InP Uni-Traveling Carrier Photodiodes With Sub-Terahertz Bandwidth and High-Power Performance Under Zero-Bias Operation-Reference-Cited by-同舟云学术

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Type-II GaAs0.5Sb0.5/InP Uni-Traveling Carrier Photodiodes With Sub-Terahertz Bandwidth and High-Power Performance Under Zero-Bias Operation

Published:2017-02-15 Issue:4 Volume:35 Page:711-716
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Wun Jhih-Min,Chao Rui-Lin,Wang Yu-Wen,Chen Yi-Han,Shi Jin-Wei

Funder

Ministry of Science and Technology of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/50/7869244/07562455.pdf?arnumber=7562455

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant effect and models of InP-based photodiode;Optics & Laser Technology;2024-08

2. High-Responsivity Unitraveling Carrier–Type Photodetector Using Avalanche InAlAs as a Collector at a High-Frequency Range;IEEE Access;2024

3. 太赫兹光电探测器及其异质集成（特邀）;Acta Optica Sinica;2024

4. Type-II GaInAsSb/InP Modified Uni-Traveling Carrier Photodiodes Under Zero-Bias Operation;Optical Fiber Communication Conference (OFC) 2024;2024

5. Bias-Insensitive GaAsSb/InP CC-MUTC Photodiodes for mmWave Generation up to 325 GHz;Journal of Lightwave Technology;2023-12-01

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