Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4799072/4800405/04800450.pdf?arnumber=4800450
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1. Design and investigation of extended source F-type nano field effect transistor using non-equilibrium Green's function;Micro and Nanostructures;2023-10
2. Analytical Comparison of the Impact of Si and GaAs as Materials in Designing 3D Density Gradient Nanowire MOSFET for Low Power Applications;2023 3rd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST);2023-01-07
3. Fine-Grain Reconfigurable Logic Circuits for Adaptive and Secure Computing via Work-Function Engineered Schottky Barrier FinFETs;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2021-12
4. Pitfalls for the characterization of self-heating effect in nano-scaled devices;2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2021-09-15
5. Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices;IEEE Journal of the Electron Devices Society;2020
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