Thermal Sensitive Parameters Extraction Method of UHVDC Thyristors Based on TCAD-Reference-Cited by-同舟云学术

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Thermal Sensitive Parameters Extraction Method of UHVDC Thyristors Based on TCAD

Published:2022-12-09 Issue: Volume: Page:
ISSN:
Container-title:2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES)
language:
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Author:

Sun Hui¹,Zhou Xuqi²,Zheng Guoqiang¹,Ding Jinjin¹,Wang Tongwen³,Xiao Huafeng¹

Affiliation:

1. State Grid Anhui Electric Power Company Limited,Electric Power Research Institute,Hefei,China

2. Southeast University,College of Electrical Engineering,Nanjing,China

3. State Grid Anhui Electric Power Company Limited,Department of Power Dispathing,Hefei,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10081933/10081944/10082054.pdf?arnumber=10082054

Reference13 articles.

1. Comparative Study on Temperature-dependent Characteristic Parameters of SiC MOSFET;jiang;Journal of Power Supply,2018

2. Reverse recovery characteristics of high voltage thyristor induced by voltage pulse based on TCAD;chen;Electric Power Engineering Technology,2020

3. Large-scale 3D TCAD study of the impact of shorts in phase controlled thyristors

4. Comparative Study on Temperature-sensitive Electrical Parameters of SiC MOSFET and Si IGBT;yu;Journal of Power Supply,2020

5. Multi-terminal HVDC and DC grid technology;tang;Proceedings of the CSEE,2013

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