High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization-Reference-Cited by-同舟云学术

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High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization

Published:2012-11 Issue:11 Volume:33 Page:1562-1564
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Chao-Lung,Lee I-Che,Wu Chun-Yu,Chou Chia-Hsin,Yang Po-Yu,Cheng Yu-Ting,Cheng Huang-Chung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6335490/06302170.pdf?arnumber=6302170

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