Evolution and mechanism of P-GaN films under proton irradiation and its influence on electronic device
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Published:2021
Issue:
Volume:
Page:1-1
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ISSN:0018-9499
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Container-title:IEEE Transactions on Nuclear Science
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language:
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Short-container-title:IEEE Trans. Nucl. Sci.
Author:
Tang Yun,Wang Lei,Zhu Huiping,Cai Xiaowu,Zhang Xuewen,Gao Jiantou,Liu Ningyang,Li Xingji,Yang Jianqun,Zhao Fazhan,Li Bo
Funder
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Innovation Center of Radiation Application Project China Institute of Atomic Energy
Institute of Modern Physics Project Chinese Academy of Sciences
National Natural Science Foundation of China
Key Research Program of Frontier Sciences Chinese Academy of Sciences
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics