Comparison of InP QDs and GaAsP QW lasers grown by MOCVD
Author:
Affiliation:
1. Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong,China
Funder
Innovation and Technology Fund
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10360489/10360472/10360543.pdf?arnumber=10360543
Reference9 articles.
1. Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)
2. Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
3. Growth of self-assembled InP quantum islands for red-light-emitting injection lasers
4. Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system
5. Optical Gain and Lasing Properties of InP/AlGaInP Quantum-Dot Laser Diode Emitting at 660 nm
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