Geometry dependent tunnel FET performance - dilemma of electrostatics vs. quantum confinement-Reference-Cited by-同舟云学术

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Geometry dependent tunnel FET performance - dilemma of electrostatics vs. quantum confinement

Published:2010-06 Issue: Volume: Page:
ISSN:
Container-title:68th Device Research Conference
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Author:

Lu Yeqing,Seabaugh A.,Fay P.,Koester S. J.,Laux S. E.,Haensch W.,Koswatta S. O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5543947/5551849/05551905.pdf?arnumber=5551905

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin-body effects in double-gate tunnel field-effect transistors;Journal of Physics D: Applied Physics;2024-02-29

2. Design and implementation of the logic gates using electrically doped configurable polarity control double gate tunnel FET;Physica Scripta;2024-02-22

3. Advanced Tunnel Field Effect Transistors;Handbook of Emerging Materials for Semiconductor Industry;2024

4. Impact of Gate All Around Architecture in Polarity Based TFET with RF/Analog Analysis;2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS);2023-04-05

5. Sensing single domains and individual defects in scaled ferroelectrics;Science Advances;2023-02-03

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