Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs-Reference-Cited by-同舟云学术

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Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs

Published:2010-06 Issue: Volume: Page:
ISSN:
Container-title:68th Device Research Conference
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Author:

Medjdoub F.,Marcon D.,Das J.,Derluyn J.,Cheng K.,Degroote S.,Germain M.,Decoutere S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5543947/5551849/05551904.pdf?arnumber=5551904

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability Investigation of GaN HEMTs for MMICs Applications;Micromachines;2014-08-22

2. Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation;Solid-State Electronics;2013-11

3. First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz;IEEE Electron Device Letters;2012-08

4. GaN-based HEMTs tested under high temperature storage test;Microelectronics Reliability;2011-09

5. Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate;IEEE Electron Device Letters;2011-09

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