A Ka-band Two-way Combined Power Amplifier in 65-nm CMOS Technology
Author:
Affiliation:
1. University of Electronic Science and Technology of China,ChengDu,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10275796/10276388/10276733.pdf?arnumber=10276733
Reference7 articles.
1. High-gain Broadband CMOS Distributed Power Amplifier for 5G Communications
2. A 24-30GHz Wideband Power Amplifier With High-Coupling-Coefficient Transmission Line Transformer and Staggered Tuning
3. A 31 GHz 2-Stage Reconfigurable Balanced Power Amplifier with 32.6dB Power Gain, 25.5% PAEmax and 17.9dBm Psatin 28nm FD-SOI CMOS
4. A wideband 28 ghz fullyintegrated power amplifier in 65 nm cmos technology;li;2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT),2018
5. Ka-band 3-stack power amplifier with 18.8 dbm psat and 23.4 fdsoi technology;aikio;2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR),2019
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