A High Efficiency and broadband GaN PA-Reference-Cited by-同舟云学术

A High Efficiency and broadband GaN PA

Published:2023-05-14 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT)
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Author:

Jiang Wei¹,Lu Cong¹,Lin Qian¹,Liu Wen Yuan²,Jin Jing³

Affiliation:

1. Qinghai MinZu University,College of Physics and Electronic Information Engineer,Qinghai,China,810007

2. Shaanxi University of Science and Technology,College of Electrical and Information Engineering,Xi'an,China,710021

3. Central China Normal University,College of Physical Science and Technology,Wuhan,China,430079

Funder

Chinese Academy of Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10275796/10276388/10276920.pdf?arnumber=10276920

Reference18 articles.

1. A High-Efficiency GaN Doherty Power Amplifier With Blended Class-EF Mode and Load-Pull Technique

2. 2.6 GHz, Class-AB GaN Power Amplifier with 56W maximum output achieving 70% power added Efficiency;chen;The first Asian Conference on WiDEBand Gap Power Devices and Applications,2018

3. 2-4 GHz continuous wave 120W GaN internal matching power device;tang;Semiconductor technology,2021

4. Design of a Broadband High-Efficiency Hybrid Class-EFJ Power Amplifier

5. Highly efficient broadband class‐J power amplifier using modified multisection quarter‐wave lines and short‐circuited stubs

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