Design of Dual-channel 3.3-4.2 GHz LNA with 11 Different Gain Modes in 90 nm SOI Technology-Reference-Cited by-同舟云学术

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Design of Dual-channel 3.3-4.2 GHz LNA with 11 Different Gain Modes in 90 nm SOI Technology

Published:2023-05-14 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT)
language:
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Author:

Shi Yu-Xiao¹,Chen Liang²,Gao Jie²,Qian Feng³

Affiliation:

1. Nanjing Electronic Devices Institute,Nanjing,China

2. Nanjing Guowei Electronics Co., Ltd.,Nanjing,China

3. Nanjing Guobo Electronics Co., Ltd.,Nanjing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10275796/10276388/10277063.pdf?arnumber=10277063

Reference6 articles.

1. Body-contacted SOI MOSFET structure and its application to DRAM

2. Analysis and optimization of packaged inductively degenerated common-source low-noise amplifiers with ESD protection

3. A 6 GHz 0.92 dB NF Cascode LNA in 180 nm SOI CMOS Technology

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