Integration of high bandwidth material engineering in the development of a futuristic gate FET: A Comparison study-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Integration of high bandwidth material engineering in the development of a futuristic gate FET: A Comparison study

Published:2023-05-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE IAS Global Conference on Emerging Technologies (GlobConET)
language:
Short-container-title:

Author:

Sahoo Tejaswini¹,Sahu Prasanna Kumar¹,Lenka Annada Shankar¹

Affiliation:

1. National Institute of Technology,Dept. of Electrical Engineering,Rourkela

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10149892/10149896/10150004.pdf?arnumber=10150004

Reference24 articles.

1. Slanted Tri-Gates for High-Voltage GaN Power Devices

2. Demonstration of a Curable Nanowire FinFET Using Punchthrough Current to Repair Hot-Carrier Damage; Demonstration of a Curable Nanowire FinFET Using Punchthrough Current to Repair Hot-Carrier Damage;park;IEEE Electron Device Lett,2018

3. High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

4. 1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance analysis and losses comparison of 10 kW GaN HEMT-based T-type inverter for electric vehicle application;Sādhanā;2023-12-22

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP