Ultra-thin atomic-layer-deposited InGaZnO thin film transistors with Back-End-of-Line Compatibility
Author:
Affiliation:
1. Elmore Family School of Electrical and Computer Engineering, Purdue University,West Lafayette,IN,U.S.A.,47907
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103069.pdf?arnumber=10103069
Reference9 articles.
1. Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering
2. Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration
3. Scaled Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition;zhang;IEEE Electron Device Letters,0
4. Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma
5. Scaled indium oxide transistors fabricated using atomic layer deposition
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