Stability and Performance Optimization of 6T SRAM Cell at Cryogenic Temperature
Author:
Affiliation:
1. National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103047.pdf?arnumber=10103047
Reference8 articles.
1. Cold CMOS as a Power-Performance-Reliability Booster for Advanced FinFETs;chiang;2020 Symposium on VLSI Technology,0
2. Cryogenic Performance for Compute-in-Memory Based Deep Neural Network Accelerator
3. Static Noise Margin Analysis for Cryo-CMOS SRAM Cell
4. High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing
5. Cool-CMOS Technology for Next Generation High Performance Computing
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Power Optimization in 6T-SRAM Cell using Carbon Nanotube Field-Effect Transistors (CNTFET);2023 7th International Conference on Electronics, Communication and Aerospace Technology (ICECA);2023-11-22
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