Effects of Unisolated Top Gate on Performance of Dual-Gate InGaZnO Thin-Film Transistor
Author:
Affiliation:
1. School of Electronic Science and Technology, Southeast University,Key Laboratory of MEMS of the Ministry of Education,Nanjing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103072.pdf?arnumber=10103072
Reference12 articles.
1. Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers
2. Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors
3. Effects of metal-hydroxyl and InOx defects on performance of InGaZnO thin-film transistor;huang;IEEE Trans on Electron Devices,2018
4. Effects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure
5. Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors;noh;Appl Phys Lett,2013
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