Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition
Author:
Affiliation:
1. Institute of Electronics, National Yang Ming Chiao Tung University,Taiwan
2. National United University,Department of Electronic Engineering,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10102932.pdf?arnumber=10102932
Reference8 articles.
1. Improving Thermal Stability for Ge p-MOSFET of HfO2-Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition
2. Reliability improvement of Ge pMOSFETs with Al2O3 dielectric by ozone post annealing
3. Ge/GeO2Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
4. Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
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