A 197 dBc/Hz FoM<sub>T</sub> 24.8-28.97 GHz Class-F VCO Using Single-Turn Multi-Tap Inductor-Reference-Cited by-同舟云学术

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A 197 dBc/Hz FoM_T 24.8-28.97 GHz Class-F VCO Using Single-Turn Multi-Tap Inductor

Published:2023-11-19 Issue: Volume: Page:139-143
ISSN:
Container-title:2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)
language:
Short-container-title:

Author:

Batabyal Anik¹,Zele Rajesh¹

Affiliation:

1. IIT Bombay,Electrical Engineering Dept.,Mumbai,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10509846/10509868/10509929.pdf?arnumber=10509929

Reference17 articles.

1. Ts 38.101–1,2 and 4:NR; user equipment (UE) radio transmission and reception,2022

2. A 1/f Noise Upconversion Reduction Technique for Voltage-Biased RF CMOS Oscillators

3. 26.2 A 0.08mm2 25.5-to-29.9GHz Multi-Resonant-RLCM-Tank VCO Using a Single-Turn Multi-Tap Inductor and CM-Only Capacitors Achieving 191.6dBc/Hz FoM and 130kHz 1/f3 PN Corner

4. A 0.083-mm2 25.2-to-29.5 GHz Multi-LC-Tank Class-F234 VCO With a 189.6-dBc/Hz FOM

5. A Class-F CMOS Oscillator

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