Investigation of Atomic Layer Futuristic Memory Devices of Binary Chalcogenides WX<sub>2</sub> (X = S and Se): First-Principles Study-Reference-Cited by-同舟云学术

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Investigation of Atomic Layer Futuristic Memory Devices of Binary Chalcogenides WX₂ (X = S and Se): First-Principles Study

Published:2022-02-21 Issue: Volume: Page:
ISSN:
Container-title:2022 Advances in Science and Engineering Technology International Conferences (ASET)
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Author:

Kumar Narender¹,Saleh Na'il¹,Kumar Arun²,Verma Mohan Lal³,Ranjan Pranay⁴

Affiliation:

1. UAE University,College of Science,Chemistry Department,Al-Ain,United Arab Emirates,P.O. Box 15551

2. Swami Vivekanand Government College Ghumarwin,Department of Physics,Himachal Pradesh,India,174021

3. FET- SSGI, Shri Shankaracharya Technical Campus, Junwani,Department of Applied Physics,Bhilai,Chhattisgarh,India

4. Indian Institute of Technology Jodhpur,Department of Metallurgical and Materials Engineering,Karwar,India,342037

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9734305/9734306/09735000.pdf?arnumber=9735000

Reference33 articles.

1. First-principles study of substitutional metal impurities in graphene: structural, electronic and magnetic properties

2. Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

3. Novel properties of transition metal dichalcogenides monolayers and nanoribbons (MX2, where M = Cr, Mo, W and X = S, Se): A spin resolved study

4. Band gap engineering of tungsten disulfide (WS2) nanoribbon by applying elastic strain and electric field

5. 2D organic semiconductors, the future of green nanotechnology

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