Base recombination of high performance InGaAs/InP HBT's-Reference-Cited by-同舟云学术

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Base recombination of high performance InGaAs/InP HBT's

Published:1993 Issue:11 Volume:40 Page:2123-2124
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Seabury C.W.,Farley C.W.,McDermott B.T.,Higgins J.A.,Lin C.L.,Kirchner P.J.,Woodall J.M.,Gee R.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/6162/00239800.pdf?arnumber=239800

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT);SPIE Proceedings;2004-03-30

2. Monte Carlo modelling of abrupt InP/InGaAs HBTs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2003-05-06

3. DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT);IEEE Transactions on Electron Devices;2003-04

4. Bulk recombination in the neutral base region of abrupt InP/InGaAs HBTs;Solid-State Electronics;1999-07

5. Numerical modelling of abrupt InP/InGaAs HBTs;Solid-State Electronics;1996-04

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