InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base-Reference-Cited by-同舟云学术

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InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base

Published:1992-05 Issue:5 Volume:13 Page:247-249
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gee R.C.,Chin T.-P.,Tu C.W.,Asbeck P.M.,Lin C.L.,Kirchner P.D.,Woodall J.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/3887/00145042.pdf?arnumber=145042

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. ESD RF Design;The ESD Handbook;2021-03-26

3. Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs;IEEE Transactions on Electron Devices;2002

4. Optical characterization of carbon-doped Ga0.47In0.53As;Journal of Luminescence;1999-12

5. Highly p-type carbon-doped InGaAs grown by atmospheric pressure organometallic vapor-phase epitaxy;Journal of Crystal Growth;1998-08

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