20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon-Reference-Cited by-同舟云学术

20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon

Published:2019-09 Issue:9 Volume:54 Page:2411-2418
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Tessmann Axel¹^ORCID,Leuther Arnulf¹^ORCID,Heinz Felix¹^ORCID,Bernhardt Frank¹,John Laurenz¹^ORCID,Massler Hermann¹,Czornomaz Lukas²^ORCID,Merkle Thomas¹^ORCID

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg im Breisgau, Germany

2. IBM Research GmbH Zürich Laboratory, Rüschlikon, Switzerland

Funder

German Federal Ministry of Defence

Bundeswehr Technical Center for Information Technology and Electronics (WTD 81) in the framework of the MIKOSENS 3 Program

European Union’s Horizon 2020 Research and Innovation Programme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/8811631/08736749.pdf?arnumber=8736749

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