Short Channel Output Conductance Enhancement Through Forward Body Biasing to Realize a 0.5 V 250 0.6–4.2 GHz Current-Reuse CMOS LNA-Reference-Cited by-同舟云学术

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Short Channel Output Conductance Enhancement Through Forward Body Biasing to Realize a 0.5 V 250 0.6–4.2 GHz Current-Reuse CMOS LNA

Published:2016-03 Issue:3 Volume:51 Page:574-586
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7426427/7366760.pdf?arnumber=7366760

Cited by 62 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Two gm/ID design approaches for high-performance dual-resistive feedback noise-cancelling LNA;International Journal of Electronics;2024-07-28

3. A $G_{m}$-Boosting Inductorless Noise-Canceling Low Noise Amplifier in 40-nm CMOS for Quantum Applications;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

4. A 0.1–4.2 GHz, 960-μW Inductor-Less and Negative Shunt Feedback LNA With Simultaneous Noise and Distortion Cancellation and Bandwidth Extension;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-06

5. A Narrowband RF Front End in 22-nm FD-SOI Featuring a Programmable Low-Noise Amplifier with a Configurable Noise-Power Trade-Off;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

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