A Wideband Balanced Amplifier Using Edge-Coupled Quadrature Couplers in 0.13-μm SiGe HBT Technology
Author:
Affiliation:
1. Faculty of Engineering and IT, School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia
2. Department of Signal Theory and Communications, University of Alcalá, Madrid, Spain
Funder
Australian Research Council (ARC) Linkage Project
Spanish Ministry of Economy, Industry, and Competitiveness
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Hardware and Architecture
Link
http://xplorestaging.ieee.org/ielx7/8919/10027800/09944939.pdf?arnumber=9944939
Reference23 articles.
1. Millimeter-wave continuous-mode power amplifier for 5G MIMO applications;li;IEEE Trans Microw Theory Techn,2019
2. A 28-GHz Harmonic-Tuned Power Amplifier in 130-nm SiGe BiCMOS
3. mm-Wave Silicon Power Amplifiers and Transmitters
4. A Full Ka-Band Power Amplifier With 32.9% PAE and 15.3-dBm Power in 65-nm CMOS
5. A Broadband High-Efficiency Continuous Class-AB Power Amplifier for Millimeter-Wave 5G and SATCOM Phased-Array Transmitters
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