A wideband fully integrated +30dBm Class-D outphasing RF PA in 65nm CMOS-Reference-Cited by-同舟云学术

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A wideband fully integrated +30dBm Class-D outphasing RF PA in 65nm CMOS

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Symposium on Integrated Circuits
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Author:

Fritzin Jonas,Svensson Christer,Alvandpour Atila

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6125294/6131866/06131871.pdf?arnumber=6131871

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reconfigurable Dual-Band High-PAE CMOS Power Amplifier;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

2. Mid-band 5G wireless network power amplifier research;2019

3. Design of a Fully Integrated Two-Stage Watt-Level Power Amplifier Using 28-nm CMOS Technology;IEEE Transactions on Microwave Theory and Techniques;2016-01

4. A Review of Watt-Level CMOS RF Power Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2014-01

5. Least-Squares Phase Predistortion of a +30 dBm Class-D Outphasing RF PA in 65 nm CMOS;IEEE Transactions on Circuits and Systems I: Regular Papers;2013-07

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