Low-noise properties of dry gate recess etched InP HEMTs-Reference-Cited by-同舟云学术

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Low-noise properties of dry gate recess etched InP HEMTs

Published:1996-10 Issue:10 Volume:17 Page:482-484
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Duran H.C.,Klepser B.-H.H.,Bachtold W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/11560/00537082.pdf?arnumber=537082

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On-wafer Characterisation of Noise Parameters of GaN HEMTs between 77 K and 400 K;2024 103rd ARFTG Microwave Measurement Conference (ARFTG);2024-06-21

2. Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-30

3. Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2005-02

4. Extremely low-noise performance of GaAs MESFETs with wide-head T-shaped gate;IEEE Transactions on Electron Devices;1999

5. Low-noise cryogenic X-band amplifier using wet-etched hydrogen passivated InP HEMT devices;IEEE Microwave and Guided Wave Letters;1999

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