Qualitative Risk Assessment in the Application of Circuit-based Protection Against SEL in Space Electronics
Author:
Affiliation:
1. National Research Nuclear University MEPhI,Center of Extreme Applied Electronics,Moscow,Russia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9802078/9801892/09802351.pdf?arnumber=9802351
Reference14 articles.
1. Latent damage in CMOS devices from single-event latchup
2. SEL Sensitivity Differences in ICs with Same Crystals Marking
3. BEHAVIOR OF MODERN INTEGRATED CIRCUITS AFTER LATCH-UP PARRYING
4. Approach to Estimation of Modern IC’s Sustainability After Series of Single Events;davydov;2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS),2017
5. Automation of Laser Single-Event Effect Testing of Integrated Circuits for Space Missions
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