Localized temporary increase in material conductivity following impact ionization in a Gunn-effect domain
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31637/01474719.pdf?arnumber=1474719
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Experimental Studies of Long Bulk NDM Samples at Low Frequencies;The Gunn-hilsum Effect;1979
2. Transient processes in gunn diodes;Solid-State Electronics;1975-11
3. Slow high-field domains in Gunn diodes with two kinds of carriers;Journal of Physics D: Applied Physics;1974-06-11
4. Impact ionization in bulk GaAs high field domain;IEEE Transactions on Electron Devices;1972-01
5. Relaxation oscillations and recombination in epitaxial N-type gallium arsenide;Solid-State Electronics;1971-02
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