Accurate BSIM4 MOS model extraction with Binning-Hybrid-Macro methodology-Reference-Cited by-同舟云学术

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Accurate BSIM4 MOS model extraction with Binning-Hybrid-Macro methodology

Published:2016-08 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Conference on Semiconductor Electronics (ICSE)
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Author:

Tan Chiew Ching,Tan Philip Beow Yew

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7569776/7573562/07573598.pdf?arnumber=7573598

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement and Expansion of the Neural Network-Based Compact Model Using a Binning Method;IEEE Journal of the Electron Devices Society;2024

2. DC and RF Small Signal Modeling of 28nm Planar MOSFET;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

3. Solution for Model Parameter Optimization and Prediction of Next-Generation Device DC Characteristics;IEEE Transactions on Electron Devices;2022-04

4. An Improved Small-Signal Equivalent Circuit Model Considering Channel Current Magnetic Effect;IEEE Microwave and Wireless Components Letters;2018-09

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