High efficiency PERT cells on n-type silicon substrates-Reference-Cited by-同舟云学术

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High efficiency PERT cells on n-type silicon substrates

Published: Issue: Volume: Page:
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Container-title:Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
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Author:

Jianhua Zhao ,Aihua Wang ,Altermatt P.P.,Green M.A.,Rakotoniaina J.P.,Breitenstein O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8468/26685/01190495.pdf?arnumber=1190495

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Temperature Optimization of ITO Thin Film on Tandem Solar Cell Efficiency;Materials;2024-06-06

2. A method for alleviating the effect of pinhole defects from silicon nitride film in n-type rear-junction PERT silicon solar cells;Advances in Natural Sciences: Nanoscience and Nanotechnology;2023-05-16

3. An Improved Process for Bifacial n-PERT Solar Cells Fabricated with Phosphorus Activation and Boron Diffusion in One-step High Temperature;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2022-12

4. Passivated Emitter and Rear Totally Diffused: PERT Solar Cell-An Overview;Silicon;2022-08-22

5. 22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study;Optical Materials;2022-06

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