4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology-Reference-Cited by-同舟云学术

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4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology

Published:2006-09 Issue: Volume: Page:
ISSN:
Container-title:2006 European Microwave Integrated Circuits Conference
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Author:

Kelly Matthew,Angelov Iltcho,Starski J.,Wadefalk Niklas,Zirath Herbert

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4057528/4057529/04057588.pdf?arnumber=4057588

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Differential BroadBand (1–16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing;Sensors;2024-05-15

2. C-Band Low-Noise Amplifier MMIC with an Average Noise Temperature of 44.5 K and 24.8 mW Power Consumption;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03

3. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

4. S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT;Journal of Semiconductors;2012-02

5. Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for 4–12 GHz Band;IEEE Microwave and Wireless Components Letters;2011-11

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