Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics-Reference-Cited by-同舟云学术

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Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics

Published:2022-04-25 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
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Author:

Shqair M.¹,Khatir Z.¹,Ibrahim A.¹,Berkani M.¹,Halouani A.¹,Hamieh T.¹

Affiliation:

1. Gustave Eiffel University, Paris-Saclay Univ.,ENS Paris-Saclay, CNRS, SATIE,Versailles,France,78000

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9758836/9758837/09758895.pdf?arnumber=9758895

Reference26 articles.

1. Effects of finite temperature on the surface energy in Al alloys from first-principles calculations

2. Calculation of the surface energy of FCC metals with modified embedded-atom method;zhang;Appl Surf Sci,2004

3. Fracture Mechanics Life Prediction for Microscale Components - with Application to Wire Bonding

4. Strengthening mechanism in micro-polycrystals with penetrable grain boundaries by discrete dislocation dynamics simulation and Hall–Petch effect

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal-stress Finite Element Analysis of Different Bonding Wire Shapes of IGBT;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10

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