Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions-Reference-Cited by-同舟云学术

Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions

Published:2020-11 Issue:11 Volume:48 Page:3962-3967
ISSN:0093-3813
Container-title:IEEE Transactions on Plasma Science
language:
Short-container-title:IEEE Trans. Plasma Sci.

Author:

Kim Matthew^ORCID,Forbes J. J.,Hirsch Emily A.,Schrock James,Lacouture Shelby^ORCID,Bilbao Argenis,Bayne Stephen B.^ORCID,O'Brien Heather K.^ORCID,Ogunniyi Aderinto A.

Funder

U.S. Army Research Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Condensed Matter Physics,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/27/9253028/09238402.pdf?arnumber=9238402

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