A 60 GHz Linear Power Amplifier with Embedded Switch in 65nm CMOS for Phased Array System-Reference-Cited by-同舟云学术

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A 60 GHz Linear Power Amplifier with Embedded Switch in 65nm CMOS for Phased Array System

Published:2022-11-27 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Chen Qin¹,Lu Jun¹,Zhang Xuexue¹,Wu Xu¹,Hu Qingsheng¹,Li Lianming¹

Affiliation:

1. Southeast University,School of Information Science and Engineering,Nanjing,China,210096

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10106786/10106791/10107256.pdf?arnumber=10107256

Reference8 articles.

1. 60-GHz 64- and 256-Element Dual-Polarized Dual-Beam Wafer-Scale Phased-Array Transceivers With Reticle-to-Reticle Stitching

2. A 1V 18 dBm 60GHz power amplifier with 24dB gain in 65nm LP CMOS

3. A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS

4. Two-Way CurrentCombining W-Band Power Amplifier in 65-nm CMOS;gu;Power,2012

5. Co-Design of 60-GHz Wideband Front-End IC With On-Chip T/R Switch Based on Passive Macro-Modeling

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