An E-Band High-Gain LNA in 65-nm RF CMOS-Reference-Cited by-同舟云学术

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An E-Band High-Gain LNA in 65-nm RF CMOS

Published:2022-11-27 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Shi Dehui¹,Deng Dongqin¹,Zhang Shuhao¹,Wang Hao¹,Chang Sheng¹,Huang Qijun¹,He Jin¹

Affiliation:

1. Wuhan University,School of Physics and Technology,Wuhan,China,430072

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10106786/10106791/10107236.pdf?arnumber=10107236

Reference9 articles.

1. A $V$ -Band Low-Power Digital Variable-Gain Low-Noise Amplifier Using Current-Reused Technique With Stable Matching and Maintained OP1dB

2. Pole-Converging Intrastage Bandwidth Extension Technique for Wideband Amplifiers

3. A 0.6-V VDD W-Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS

4. A CMOS centric 77GHz automotive radar architecture;kim;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2012

5. A 117mW 77GHz receiver in 65nm CMOS with ladder structured tunable VCO

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