A 2.6-GHz-Band High Power GaN Doherty Power Amplifier Based on GaAs Integrated Passive Devices-Reference-Cited by-同舟云学术

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A 2.6-GHz-Band High Power GaN Doherty Power Amplifier Based on GaAs Integrated Passive Devices

Published:2023-11-13 Issue: Volume: Page:1-3
ISSN:
Container-title:2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Dai Wei¹,Luo Shuai¹,Wu Qingzhi¹,Xu Ruimin¹,Yan Bo¹,Wu Chang²,Xu Yuehang¹

Affiliation:

1. University of Electronic Science and Technology of China,Chengdu,China,611731

2. Hubei jiufengshan laboratory,Wuhan,China,430074

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10380804/10380975/10381082.pdf?arnumber=10381082

Reference10 articles.

1. Design of GaN HEMT based Doherty Power Amplifier for 5G Applications

2. High-Efficiency Dual-Band Filtering Doherty Power Amplifier Based on Multi-Function Circuit

3. Ka-band MMIC GaN Doherty Power Amplifiers: Considerations on Technologies and Architectures

4. Design of a Post-Matching Asymmetric Doherty Power Amplifier for Broadband Applications

5. Asymmetric Broadband Doherty Power Amplifier Using GaN MMIC for Femto-Cell Base-Station

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